Strained silicon structure

Details Strained silicon structure Strained silicon structure

2005-06-07

2005-06-07

Tran, Minh-Loan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S296000, C438S424000, C257S019000, C257S190000

Reexamination Certificate

active

06902965

ABSTRACT:
A semiconductor device includes a substrate, a first epitaxial layer, a second epitaxial layer, a third epitaxial layer, a first trench, and a second trench. The first epitaxial layer is formed on the substrate. The first layer has lattice mismatch relative to the substrate. The second epitaxial layer is formed on the first layer, and the second layer has lattice mismatch relative to the first layer. The third epitaxial layer is formed on the second layer, and the third layer has lattice mismatch relative to the second layer. Hence, the third layer may be strained silicon. The first trench extends through the first layer. The second trench extends through the third layer and at least partially through the second layer. At least part of the second trench is aligned with at lease part of the first trench, and the second trench is at least partially filled with an insulating material.

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