Strained silicon MOSFETs having NMOS gates with work...

Details Strained silicon MOSFETs having NMOS gates with work... Strained silicon MOSFETs having NMOS gates with work...

2005-08-16

2005-08-16

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S223000, C438S227000

Reexamination Certificate

active

06929992

ABSTRACT:
The threshold voltage shift exhibited by strained silicon NMOS devices is compensated with respect to the threshold voltages of PMOS devices formed on the same substrate by increasing the work function of the NMOS gates. The NMOS gate work function exceeds the PMOS gate work function so as to compensate for a difference in the respective NMOS and PMOS threshold voltages. The NMOS gates are preferably fully silicided while the PMOS gates are partially silicided.

REFERENCES:
patent: 5920774 (1999-07-01), Wu
patent: 6130123 (2000-10-01), Liang et al.
patent: 6204103 (2001-03-01), Bai et al.
patent: 6750519 (2004-06-01), Lin et al.

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