Strained silicon MOS devices

Details Strained silicon MOS devices Strained silicon MOS devices

2008-03-11

2008-03-11

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S204000, C257S288000, C257S350000, C257SE27046

Reexamination Certificate

active

10637351

ABSTRACT:
A structure to improve carrier mobility of a MOS device in an integrated circuit. The structure comprises a semiconductor substrate, containing a source region and a drain region; a conductive gate overlying a gate dielectric layer on the semiconductor substrate; a conformal stress film covering the source region, the drain region, and the conductive gate. In addition, the structure may comprise a semiconductor substrate, containing a source region and a drain region; a conductive gate overlying a gate dielectric layer on the semiconductor substrate; a plurality of stress films covering the source region, the drain region, and the conductive gate. Moreover, the structure may comprise a semiconductor substrate, containing a source region and a drain region; a conductive gate overlying a gate dielectric layer on the semiconductor substrate; a spacer disposed adjacent to the conductive gate, the spacer having a width less than 550 angstroms; a stress film covering the source region, the drain region, the conductive gate, and the spacer.

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Ootsuka et al., “A Highly Dense, High-Performance 130 nm Node CMOS Technology For Large Scale System-On-A-Chip Applications”, International Electron Devices Meeting 2000:IEDM Technical Digest, San Francisco, CA, Dec.10-13, 2000, pp. 575-578.
Tiwari et al., “Hole Mobility Improvement In Silicon-On-Insulator And Bulk Silicon Transistors Using Local Strain”, International Electron Devices Meeting, 1997, Washington, DC, Dec. 7-10, 1997, pp. 939-941.

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