Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-30
2005-08-30
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S275000
Reexamination Certificate
active
06936506
ABSTRACT:
A method of manufacturing a semiconductor device includes providing a strained-silicon semiconductor layer over a silicon germanium layer, and partially removing a first portion of the strained-silicon layer. The strained-silicon layer includes the first portion and a second portion, and a thickness of the second portion is greater than a thickness of the first portion. Initially, the first and second portions of the strained-silicon layer initially can have the same thickness. A p-channel transistor is formed over the first portion, and a n-channel transistor is formed over the second portion. A semiconductor device is also disclosed.
REFERENCES:
patent: 6339232 (2002-01-01), Takagi
patent: 6600170 (2003-07-01), Xiang
patent: 2003/0013287 (2003-01-01), Lochtefeld et al.
patent: 2003/0062586 (2003-04-01), Wallace et al.
patent: 2003/0077867 (2003-04-01), Fitzgerald
patent: 2003/0227013 (2003-12-01), Currie et al.
patent: 2004/0171223 (2004-09-01), Hammond et al.
patent: 2004/0175872 (2004-09-01), Yeo et al.
Buller James F.
Wristers Derick J.
Xiang Qi
Yu Bin
Advanced Micro Devices , Inc.
Nguyen Tuan H.
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