Strained silicon CMOS on hybrid crystal orientations

Details Strained silicon CMOS on hybrid crystal orientations Strained silicon CMOS on hybrid crystal orientations

2006-07-25

2008-07-22

Graybill, David E (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S150000, C438S152000, C438S154000, C438S199000, C438S222000, C438S256000, C438S275000, C438S424000, C438S479000, C438S510000

Reexamination Certificate

active

07402466

ABSTRACT:
Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semiconducting layer, or both. In accordance with the present invention, the strained Si layer has the same crystallographic orientation as either the regrown semiconductor layer or the second semiconducting layer. The methods provide a hybrid substrate in which at least one of the device layers includes strained Si.

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