Strained silicon CMOS on hybrid crystal orientations

Details Strained silicon CMOS on hybrid crystal orientations Strained silicon CMOS on hybrid crystal orientations

2006-08-08

2006-08-08

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000, C257S349000, C257S350000, C257S351000, C257S352000, C257S353000, C257S354000, C257S627000, C257S628000

Reexamination Certificate

active

07087965

ABSTRACT:
Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semiconducting layer, or both. In accordance with the present invention, the strained Si layer has the same crystallographic orientation as either the regrown semiconductor layer or the second semiconducting layer. The methods provide a hybrid substrate in which at least one of the device layers includes strained Si.

REFERENCES:
patent: 5387888 (1995-02-01), Eda et al.
patent: 5998807 (1999-12-01), Lustig et al.
patent: 6160597 (2000-12-01), Schadt et al.
patent: 6515335 (2003-02-01), Christiansen et al.
patent: 6639280 (2003-10-01), Sugatani et al.
patent: 6830976 (2004-12-01), Fitzgerald
patent: 6995430 (2006-02-01), Langdo et al.
patent: 2002/0033521 (2002-03-01), Matsuoka
patent: 2003/0015709 (2003-01-01), Emrick et al.
patent: 2004/0256700 (2004-12-01), Doris et al.
patent: 2005/0093104 (2005-05-01), Ieong et al.

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