Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2006-01-13
2009-02-03
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C438S413000, C438S416000, C438S423000, C257SE21561, C257SE21563
Reexamination Certificate
active
07485539
ABSTRACT:
A strained (tensile or compressive) semiconductor-on-insulator material is provided in which a single semiconductor wafer and a separation by ion implantation of oxygen process are used. The separation by ion implantation of oxygen process, which includes oxygen ion implantation and annealing creates, a buried oxide layer within the material that is located beneath the strained semiconductor layer. In some embodiments, a graded semiconductor buffer layer is located beneath the buried oxide layer, while in other a doped semiconductor layer including Si doped with at least one of B or C is located beneath the buried oxide layer.
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Adam Thomas N.
Bedell Stephen W.
de Souza Joel P.
Fogel Keith E.
Reznicek Alexander
International Business Machines - Corporation
Lee Hsien-ming
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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