Strained semiconductor device and method of making the same

Details Strained semiconductor device and method of making the same Strained semiconductor device and method of making the same

2011-08-23

2011-08-23

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21431

Reexamination Certificate

active

08003470

ABSTRACT:
In a method for forming a semiconductor device, a gate electrode is formed over a semiconductor body (e.g., bulk silicon substrate or SOI layer). The gate electrode is electrically insulated from the semiconductor body. A first sidewall spacer is formed along a sidewall of the gate electrode. A sacrificial sidewall spacer is formed adjacent the first sidewall spacer. The sacrificial sidewall spacer and the first sidewall spacer overlying the semiconductor body. A planarization layer is formed over the semiconductor body such that a portion of the planarization layer is adjacent the sacrificial sidewall spacer. The sacrificial sidewall spacer can then be removed and a recess etched in the semiconductor body. The recess is substantially aligned between the first sidewall spacer and the portion of the planarization layer. A semiconductor material (e.g., SiGe or SiC) can then be formed in the recess.

REFERENCES:
patent: 5364497 (1994-11-01), Chau et al.
patent: 5679610 (1997-10-01), Matsuda et al.
patent: 6111267 (2000-08-01), Fischer et al.
patent: 6136679 (2000-10-01), Yu et al.
patent: 6417056 (2002-07-01), Quek et al.
patent: 6448180 (2002-09-01), Mani et al.
patent: 6583000 (2003-06-01), Hsu et al.
patent: 6621131 (2003-09-01), Murthy et al.
patent: 6703648 (2004-03-01), Xiang et al.
patent: 6787464 (2004-09-01), Cheek et al.
patent: 6825086 (2004-11-01), Lee et al.
patent: 6927138 (2005-08-01), Takenaka
patent: 7023059 (2006-04-01), Chan et al.
patent: 7135724 (2006-11-01), Chen et al.
patent: 2002/0135015 (2002-09-01), Chen et al.
patent: 2003/0040151 (2003-02-01), Lee
patent: 2003/0140844 (2003-07-01), Maa et al.
patent: 2003/0234422 (2003-12-01), Wang et al.
patent: 2004/0007724 (2004-01-01), Murthy et al.
patent: 2004/0026765 (2004-02-01), Currie et al.
patent: 2004/0087107 (2004-05-01), Takenaka
patent: 2004/0126705 (2004-07-01), Lu et al.
patent: 2004/0142537 (2004-07-01), Lee et al.
patent: 2004/0173815 (2004-09-01), Yeo et al.
patent: 2005/0029601 (2005-02-01), Chen et al.
patent: 2005/0035369 (2005-02-01), Lin et al.
patent: 2005/0035470 (2005-02-01), Ko et al.
patent: 2005/0048753 (2005-03-01), Schwan
patent: 2005/0093075 (2005-05-01), Bentum et al.
patent: 2005/0093084 (2005-05-01), Wang et al.
patent: 2005/0101077 (2005-05-01), Lee et al.
patent: 2005/0142878 (2005-06-01), Jung
patent: 2005/0184345 (2005-08-01), Lin et al.
patent: 2005/0194699 (2005-09-01), Belyansky et al.
patent: 2005/0260807 (2005-11-01), Orlowski et al.
patent: 2005/0272187 (2005-12-01), Murthy et al.
patent: 2006/0081896 (2006-04-01), Maeda
patent: 03-272182 (1991-12-01), None
patent: 04-079337 (1992-03-01), None
patent: 2003-229361 (2003-08-01), None
patent: 2003-234453 (2003-08-01), None
patent: 2004-153173 (2004-05-01), None
patent: 2004-311954 (2004-11-01), None
patent: 2006-121074 (2006-05-01), None
patent: 2008-504677 (2008-02-01), None
patent: WO 2004-008489 (2004-01-01), None
patent: WO 2006/006972 (2006-01-01), None
Moroz, V., et al., “Analyzing strained-silicon options for stress-engineering transistors,” Solid State Technology, Jul. 2004, 3 pages, Penn Well Corporation.
Dunga, M. V., et al. “A Holistic Model for Mobility Enhancement through Process-Induced Stress,” IEEE Conference on Electron Devices and Solid-State Circuits, Dec. 19-21, 2005, pp. 43-46.

Affiliated with

Also associated with

Rating

Strained semiconductor device and method of making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Strained semiconductor device and method of making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Strained semiconductor device and method of making the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2709205