Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2011-08-09
2011-08-09
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S618000, C257S288000
Reexamination Certificate
active
07994595
ABSTRACT:
One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.
REFERENCES:
patent: 4241359 (1980-12-01), Izumi et al.
patent: 4314595 (1982-02-01), Yamamoto et al.
patent: 4322980 (1982-04-01), Suzuki et al.
patent: 4589928 (1986-05-01), Dalton et al.
patent: 4996627 (1991-02-01), Zias et al.
patent: 5063113 (1991-11-01), Wada
patent: 5234535 (1993-08-01), Beyer et al.
patent: 5426061 (1995-06-01), Sopori
patent: 5441591 (1995-08-01), Imthurn et al.
patent: 5661044 (1997-08-01), Holland et al.
patent: 5679475 (1997-10-01), Yamagata et al.
patent: 5684997 (1997-11-01), Kau et al.
patent: 5840590 (1998-11-01), Myers, Jr. et al.
patent: 5858819 (1999-01-01), Miyasaka
patent: 5877070 (1999-03-01), Goesele et al.
patent: 5879996 (1999-03-01), Forbes
patent: 5963817 (1999-10-01), Chu et al.
patent: 6022793 (2000-02-01), Wijaranakula et al.
patent: 6083324 (2000-07-01), Henley et al.
patent: 6093623 (2000-07-01), Forbes
patent: 6096433 (2000-08-01), Kikuchi et al.
patent: 6103598 (2000-08-01), Yamagata et al.
patent: 6107661 (2000-08-01), Okabe et al.
patent: 6136666 (2000-10-01), So
patent: 6143628 (2000-11-01), Sato et al.
patent: 6174784 (2001-01-01), Forbes
patent: 6204145 (2001-03-01), Noble
patent: 6228694 (2001-05-01), Doyle et al.
patent: 6242324 (2001-06-01), Kub et al.
patent: 6251751 (2001-06-01), Chu et al.
patent: 6261876 (2001-07-01), Crowder et al.
patent: 6271273 (2001-08-01), You et al.
patent: 6309950 (2001-10-01), Forbes
patent: 6315826 (2001-11-01), Muramatsu
patent: 6328796 (2001-12-01), Kub et al.
patent: 6338805 (2002-01-01), Anderson
patent: 6339011 (2002-01-01), Gonzalez et al.
patent: 6377070 (2002-04-01), Forbes
patent: 6383924 (2002-05-01), Farrar et al.
patent: 6424001 (2002-07-01), Forbes et al.
patent: 6448601 (2002-09-01), Forbes et al.
patent: 6455397 (2002-09-01), Belford
patent: 6461933 (2002-10-01), Houston
patent: 6478883 (2002-11-01), Tamatsuka et al.
patent: 6486008 (2002-11-01), Lee
patent: 6496034 (2002-12-01), Forbes et al.
patent: 6497763 (2002-12-01), Kub et al.
patent: 6514836 (2003-02-01), Belford
patent: 6515335 (2003-02-01), Christiansen et al.
patent: 6531727 (2003-03-01), Ahn et al.
patent: 6538330 (2003-03-01), Forbes
patent: 6541356 (2003-04-01), Fogel et al.
patent: 6559491 (2003-05-01), Forbes et al.
patent: 6566682 (2003-05-01), Forbes
patent: 6582512 (2003-06-01), Geusic et al.
patent: 6583437 (2003-06-01), Mizuno et al.
patent: 6597203 (2003-07-01), Forbes
patent: 6649476 (2003-11-01), Forbes
patent: 6649492 (2003-11-01), Chu et al.
patent: 6657276 (2003-12-01), Karlsson et al.
patent: 6689671 (2004-02-01), Yu et al.
patent: 6703293 (2004-03-01), Tweet et al.
patent: 6703648 (2004-03-01), Xiang et al.
patent: 6717216 (2004-04-01), Doris et al.
patent: 6740913 (2004-05-01), Doyle et al.
patent: 6825102 (2004-11-01), Bedell et al.
patent: 6855649 (2005-02-01), Christiansen et al.
patent: 6900094 (2005-05-01), Hammond et al.
patent: 6902616 (2005-06-01), Yamazaki et al.
patent: 6987037 (2006-01-01), Forbes
patent: 6994762 (2006-02-01), Clingman et al.
patent: 7008854 (2006-03-01), Forbes
patent: 7023051 (2006-04-01), Forbes
patent: 7041575 (2006-05-01), Forbes
patent: 7045874 (2006-05-01), Forbes
patent: 7054532 (2006-05-01), Forbes et al.
patent: 7081395 (2006-07-01), Chi et al.
patent: 7084429 (2006-08-01), Forbes
patent: 7115480 (2006-10-01), Forbes
patent: 7142577 (2006-11-01), Geusic et al.
patent: 7153753 (2006-12-01), Forbes
patent: 7198974 (2007-04-01), Forbes
patent: 7202530 (2007-04-01), Forbes
patent: 7220656 (2007-05-01), Forbes
patent: 7271445 (2007-09-01), Forbes
patent: 7273788 (2007-09-01), Forbes
patent: 7394111 (2008-07-01), Forbes
patent: 7405444 (2008-07-01), Forbes
patent: 7429763 (2008-09-01), Forbes
patent: 7439158 (2008-10-01), Forbes et al.
patent: 7482190 (2009-01-01), Forbes
patent: 7485544 (2009-02-01), Forbes et al.
patent: 7504310 (2009-03-01), Forbes
patent: 7528463 (2009-05-01), Forbes
patent: 7662701 (2010-02-01), Forbes
patent: 7687329 (2010-03-01), Forbes
patent: 2002/0001965 (2002-01-01), Forbes
patent: 2002/0070421 (2002-06-01), Ashburn
patent: 2002/0185686 (2002-12-01), Christiansen et al.
patent: 2003/0131782 (2003-07-01), Geusic et al.
patent: 2003/0181018 (2003-09-01), Geusic et al.
patent: 2003/0190796 (2003-10-01), Geusic
patent: 2003/0227072 (2003-12-01), Forbes
patent: 2004/0048450 (2004-03-01), Tweet et al.
patent: 2004/0176483 (2004-09-01), Geusic
patent: 2004/0214366 (2004-10-01), Segal et al.
patent: 2004/0217352 (2004-11-01), Forbes
patent: 2004/0217391 (2004-11-01), Forbes
patent: 2004/0224480 (2004-11-01), Forbes
patent: 2004/0232487 (2004-11-01), Forbes
patent: 2004/0232488 (2004-11-01), Forbes
patent: 2005/0020094 (2005-01-01), Forbes et al.
patent: 2005/0023529 (2005-02-01), Forbes
patent: 2005/0023612 (2005-02-01), Forbes
patent: 2005/0023616 (2005-02-01), Forbes
patent: 2005/0029619 (2005-02-01), Forbes
patent: 2005/0032296 (2005-02-01), Forbes
patent: 2005/0070036 (2005-03-01), Geusic et al.
patent: 2005/0087842 (2005-04-01), Forbes
patent: 2005/0105869 (2005-05-01), Forbes et al.
patent: 2005/0250274 (2005-11-01), Forbes et al.
patent: 2005/0285139 (2005-12-01), Forbes
patent: 2006/0001094 (2006-01-01), Forbes
patent: 2006/0011982 (2006-01-01), Forbes
patent: 2006/0097281 (2006-05-01), Forbes
patent: 2006/0138708 (2006-06-01), Geusic
patent: 2006/0208343 (2006-09-01), Forbes
patent: 2006/0258063 (2006-11-01), Forbes
patent: 2006/0258123 (2006-11-01), Forbes
patent: 2006/0263994 (2006-11-01), Forbes
patent: 2006/0267152 (2006-11-01), Forbes
patent: 2007/0096193 (2007-05-01), Forbes et al.
patent: 2007/0164361 (2007-07-01), Forbes
patent: 2008/0029840 (2008-02-01), Forbes et al.
patent: 2009/0108363 (2009-04-01), Forbes et al.
patent: 434984 (1991-09-01), None
patent: 54-152464 (1979-11-01), None
patent: 54-155770 (1979-12-01), None
patent: 04-372152 (1992-12-01), None
Sato, T., et al., “SON (Silicon on Nothing) MOSFET using ESS (Empty Space in Silicon) technique for SoC applications”,IEDM Technical Digest. International Electron Devices Meeting, (2001), 37.1.1.-37.1.4.
“Cornell Demonstrates a Universal Substrate”,Compound Semiconductor, 3(2), (Mar./Apr. 1997),27-29.
Abe, T , “Silicon Wafer-Bonding Process Technology for SOI Structures”,Extended Abstracts of the 22nd(1990 International)Conference on Solid State Devices and Materials, (1990),853-856.
Ang, Kah W., “Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions”,IEEE International Electron Devices Meeting, 2004. IEDM Technical Digest., (Dec. 2004),1069-1071.
Auberton-Herve, A J., “SOI: Materials to Systems”,International Electron Devices Meeting, Technical Digest, (1996),3-10.
Autumn, Kellar , et al., “Adhesive force of a single gecko foot-hair”,Nature, 405(6787), (Jun. 2000),681-685.
Autumn, Kellar , et al., “Evidence for van der Waals adhesion in gecko setae.”,Proceedings of the National Academy of Science U S A.; 99(19), (Sep. 17, 2002),12252-6.
Baginski, T. A., “Back-side germanium ion implantation gettering of silicon”,Journal of the Electrochemical Society, 135(7), Dept of Electrical Engineering, Auburn Univ, AL,(Jul. 1988),1842-3.
Ball, Philip , “Why microchips weigh over a kilogram: A small mountain of material goes into every microchip”,Nature Science Update, http://www.nature.com
su/021028/
Akram Salman
Forbes Leonard
Geusic Joseph E.
Micro)n Technology, Inc.
Perkins Pamela E
Schwegman Lundberg & Woessner, P.A.
Wilczewski Mary
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