Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Reexamination Certificate
2011-08-02
2011-08-02
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
C438S528000
Reexamination Certificate
active
07989311
ABSTRACT:
One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.
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Sato, T., et al., “SON (Silicon on Nothing) MOSFET using ESS (Empty Space in Silicon) technique for SoC applications”,IEDM Technical Digest. International Electron Devices Meeting, (2001), 37.1.1-37.1.4.
Akram Salman
Forbes Leonard
Geusic Joseph E.
Micron Technlogy, Inc.
Perkins Pamela E
Schwegman Lundberg & Woessner, P.A.
Wilczewski Mary
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