Strained layers within semiconductor buffer structures

Details Strained layers within semiconductor buffer structures Strained layers within semiconductor buffer structures

2006-07-24

2009-10-27

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S222000, C257S019000, C257S190000, C257SE21092, C257SE21182, C257SE21207

Reexamination Certificate

active

07608526

ABSTRACT:
A semiconductor workpiece including a substrate, a relaxed buffer layer including a graded portion formed on the substrate, and at least one strained transitional layer within the graded portion of the relaxed buffer layer and method of manufacturing the same. The at least one strained transitional layer reduces an amount of workpiece bow due to differential coefficient of thermal expansion (CTE) contraction of the relaxed buffer layer relative to CTE contraction of the substrate

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