Strained gettering layers for semiconductor processes

Details Strained gettering layers for semiconductor processes Strained gettering layers for semiconductor processes

2007-04-10

2007-04-10

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S474000, C438S471000, C257SE29003, C257S021000

Reexamination Certificate

active

10956481

ABSTRACT:
A method and structure for forming semiconductor structures using tensilely strained gettering layers. The method includes forming a donor wafer comprising a tensilely strained gettering layer disposed over a substrate, and at least one material layer disposed over the tensilely strained gettering layer. Additionally, the donor wafer may possess a particle-confining region proximate the tensilely strained layer. The method also includes introducing particles into the donor wafer to a depth below the surface, and accumulating at least some particles within the tensilely strained gettering layer. Next, the method includes initiating a cleaving action so as to separate at least one of the material layers form the substrate. The tensilely strained gettering layer may accumulate particles and/or point defects and reduce the implantation dose and thermal budget required for cleaving.

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