Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-17
2008-06-17
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257S350000, C257S401000
Reexamination Certificate
active
07388259
ABSTRACT:
A semiconductor device structure, includes a PMOS device200and an NMOS device300disposed on a substrate1,2, the PMOS device including a compressive layer6stressing an active region of the PMOS device, the NMOS device including a tensile layer9stressing an active region of the NMOS device, wherein the compressive layer includes a first dielectric material, the tensile layer includes a second dielectric material, and the PMOS and NMOS devices are FinFET devices200, 300.
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Chidambarrao Dureseti
Doris Bruce B.
Ieong Meikei
Mandelman Jack A.
Abate Joseph P.
International Business Machines - Corporation
Liu Benjamin Tzu-Hung
Tran Minhloan
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