Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-30
2011-11-22
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S305000, C438S595000, C257SE21131, C257SE21431, C257SE21435, C257SE21619
Reexamination Certificate
active
08062946
ABSTRACT:
A strained-channel transistor structure with lattice-mismatched zone and fabrication method thereof. The transistor structure includes a substrate having a strained channel region, comprising a first semiconductor material with a first natural lattice constant, in a surface, a gate dielectric layer overlying the strained channel region, a gate electrode overlying the gate dielectric layer, and a source region and drain region oppositely adjacent to the strained channel region, with one or both of the source region and drain region comprising a lattice-mismatched zone comprising a second semiconductor material with a second natural lattice constant different from the first natural lattice constant.
REFERENCES:
patent: 5683934 (1997-11-01), Candelaria
patent: 5710450 (1998-01-01), Chau et al.
patent: 5714777 (1998-02-01), Ismail et al.
patent: 6071783 (2000-06-01), Liang et al.
patent: 6127233 (2000-10-01), Rodder
patent: 6190975 (2001-02-01), Kubo et al.
patent: 6274894 (2001-08-01), Wieczorek et al.
patent: 6406973 (2002-06-01), Lee
patent: 6437375 (2002-08-01), Beaman
patent: 6492216 (2002-12-01), Yeo et al.
patent: 6495402 (2002-12-01), Yu et al.
patent: 6504214 (2003-01-01), Yu et al.
patent: 6509241 (2003-01-01), Park et al.
patent: 6531347 (2003-03-01), Huster et al.
patent: 6599803 (2003-07-01), Weon et al.
patent: 6657223 (2003-12-01), Wang et al.
patent: 6703648 (2004-03-01), Xiang et al.
patent: 6743684 (2004-06-01), Liu
patent: 6797556 (2004-09-01), Murthy et al.
patent: 6812103 (2004-11-01), Wang et al.
patent: 6858505 (2005-02-01), Park
patent: 6885084 (2005-04-01), Murthy et al.
patent: 6887762 (2005-05-01), Murthy et al.
patent: 7132338 (2006-11-01), Samoilov et al.
patent: 7208362 (2007-04-01), Chidambaram
patent: 7335929 (2008-02-01), Lin et al.
patent: 2002/0123183 (2002-09-01), Fitzgerald
patent: 2003/0057416 (2003-03-01), Currie et al.
patent: 2004/0072395 (2004-04-01), Liu
patent: 2004/0262694 (2004-12-01), Chidambaram
patent: 2006/0024876 (2006-02-01), Chidambaram et al.
patent: 2006/0081875 (2006-04-01), Lin et al.
patent: 2007/0018205 (2007-01-01), Chidambarrao et al.
patent: 2007/0026599 (2007-02-01), Peidous et al.
patent: 2007/0034945 (2007-02-01), Bohr et al.
patent: 2007/0096195 (2007-05-01), Hoentschel et al.
patent: 2007/0096201 (2007-05-01), Ning
patent: 2011/0014765 (2011-01-01), Fukuda et al.
patent: 1123470 (1996-05-01), None
patent: WO 00/30169 (2000-05-01), None
China Patent Office Action.
Hu Chenming
Lee Wen-Chin
Lin Chun-Chieh
Yeo Yee-Chia
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Toniae
Thomas|Kayden
Wilczewski Mary
LandOfFree
Strained channel transistor structure with... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Strained channel transistor structure with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Strained channel transistor structure with... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4295201