Strain bars in stressed layers of MOS devices

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode

Reexamination Certificate

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C257S401000, C257S669000, C257S670000, C257SE29193

Reexamination Certificate

active

07943961

ABSTRACT:
A semiconductor structure includes an active region; a gate strip overlying the active region; and a metal-oxide-semiconductor (MOS) device. A portion of the gate strip forms a gate of the MOS device. A portion of the active region forms a source/drain region of the MOS device. The semiconductor structure further includes a stressor region over the MOS device; and a stressor-free region inside the stressor region and outside the region over the active region.

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