Storage nodes including a phase chang layer and methods of...

Details Storage nodes including a phase chang layer and methods of... Storage nodes including a phase chang layer and methods of...

2011-01-18

2011-01-18

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S095000, C438S237000, C257SE21158

Reexamination Certificate

active

07871906

ABSTRACT:
In various embodiments, the present disclosure may provide a storage node. In various implementations, the storage node may include a bottom electrode having a non-planar bottom surface that conforms with and is connected to a non-planar top surface of a diode electrode of a memory device. The storage node may further include a phase change layer on top of a bottom diode and a top electrode on a top surface of a phase change layer.

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