Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-01
2010-12-28
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S298000
Reexamination Certificate
active
07859035
ABSTRACT:
A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.
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Chinese Office Action of Jun. 5, 2009, and English translation thereof.
Bourim El Mostafa
Cho Choong-rae
Lee Eun-hong
Lee Sang-mock
Lee Seung-woon
Cao Phat X
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
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