Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-10
2006-10-10
Sarkar, Asok K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S295000, C257S303000, C257SE21647
Reexamination Certificate
active
07119392
ABSTRACT:
In a storage electrode of a semiconductor device, and a method of forming the same, the storage electrode includes an outer cylinder including a first outer cylindrical portion having a first outer diameter, and a second outer cylindrical portion that is formed on the first outer cylindrical portion and having a second outer diameter, which is less than the first outer diameter, the first and second outer cylindrical portions having substantially equal inner diameters, and an inner cylinder formed on inner surfaces of the outer cylinder.
REFERENCES:
patent: 6380579 (2002-04-01), Nam et al.
patent: 2001/0052614 (2001-12-01), Ishibashi
patent: 2003/0122174 (2003-07-01), Fukuzumi
patent: 2005/0205915 (2005-09-01), Son
patent: 1020000065969 (2000-11-01), None
patent: 1020020043674 (2002-06-01), None
patent: 1020020055137 (2002-07-01), None
Hwang Ki-Hyun
Kim Hyo-Jung
Kim Kyoung-Seok
Lee Hyeon-Deok
Nam Seok-Woo
Lee & Morse P.C.
Sarkar Asok K.
Yevsikov Victor V.
LandOfFree
Storage electrode of a semiconductor device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Storage electrode of a semiconductor device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Storage electrode of a semiconductor device and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3699950