Storage capacitor optimization for one device FET dynamic RAM ce

Details Storage capacitor optimization for one device FET dynamic RAM ce Storage capacitor optimization for one device FET dynamic RAM ce

1983-06-30

1984-08-21

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 29578, 357 51, H01L 2194

Patent

active

044661770

ABSTRACT:
A process for providing different insulator systems for the storage capacitor and the FET in a single polysilicon one-device memory cell, such as a dynamic RAM cell, without requiring an additional masking level. In particular, the Hi-C or diffusion store ion implantation mask is used to implement this feature. This process can be used to provide different materials in the insulator system of the storage capacitor and the FET, or the same materials with different thicknesses.

REFERENCES:
patent: 4240092 (1980-12-01), Kuo
patent: 4322881 (1982-04-01), Enomoto et al.
patent: 4391032 (1983-07-01), Schulte
patent: 4397077 (1983-08-01), Derbenwick et al.

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