Storage capacitor for semiconductor memory cells and method...

Details Storage capacitor for semiconductor memory cells and method... Storage capacitor for semiconductor memory cells and method...

2006-01-25

2008-11-11

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S307000, C257S308000, C257S309000, C257SE27086, C257SE27089

Reexamination Certificate

active

07449739

ABSTRACT:
A capacitor for a dynamic semiconductor memory cell, a memory and method of making a memory is disclosed. In one embodiment, a storage electrode of the capacitor has a pad-shaped lower section and a cup-shaped upper section, which is placed on top of the lower section. A lower section of a backside electrode encloses the pad-shaped section of the storage electrode. An upper section of the backside electrode is enclosed by the cup-shaped upper section of the storage electrode. A first capacitor dielectric separates the lower sections of the backside and the storage electrodes. A second capacitor dielectric separates the upper sections of the backside and the storage electrodes. The electrode area of the capacitor is enlarged while the requirements for the deposition of the capacitor dielectric are relaxed. Aspect ratios for deposition and etching processes are reduced.

REFERENCES:
patent: 2003/0122174 (2003-07-01), Fukuzumi
patent: 2004/0217406 (2004-11-01), Chung et al.
patent: 2005/0087789 (2005-04-01), Baik et al.
patent: 2006/0079049 (2006-04-01), Kundalgurki et al.

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