Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-10
2009-12-29
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S381000, C438S238000, C438S680000, C438S780000, C257SE21170, C257SE21051, C257SE21218, C257SE21266, C257SE21645
Reexamination Certificate
active
07638382
ABSTRACT:
A method of manufacturing a storage apparatus includes preparing a first substrate on which a plurality of row lines are arranged in parallel, preparing a second substrate on which a plurality of column lines are arranged in parallel, dispensing as a droplet a solution, in which particles are dispersed in a solvent, from a solution supply port to which an electric field is applied, toward a surface of the first substrate or a surface of the second substrate, and arranging the surfaces of the first and second substrates to face each other with a gap such that the column lines cross the row lines, thereby making the particles at crossing portions to be movable between the row lines and the column lines facing each other and between the crossing portions adjacent to each other.
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Hiraoka Toshiro
Murooka Ken-ichi
Kabushiki Kaisha Toshiba
Nhu David
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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