Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-30
2005-08-30
Flynn, Nathan J. (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S312000, C438S318000
Reexamination Certificate
active
06936509
ABSTRACT:
A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.
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Coolbaugh Douglas Duane
Dupuis Mark D.
Gallagher Matthew D.
Geiss Peter J.
Philips Brett A.
Flynn Nathan J.
Sabo, Esq. William D.
Scully Scott Murphy & Presser
Sefer Ahmed N.
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