STI process for eliminating kink effect

Details STI process for eliminating kink effect STI process for eliminating kink effect

1998-01-28

2000-11-28

Mills, Gregory

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438424, 438696, 438697, 438698, 438701, H01L 2100

Patent

active

061534781

ABSTRACT:
The process includes the following steps. At first, a masking layer is formed over the semiconductor substrate. A portion of the masking layer is then removed to form an opening to the semiconductor substrate. Sidewall spacers are formed on the opening and a portion of the semiconductor substrate is removed to form a trench, through an aperture defined by the sidewall spacers. The sidewall spacers is then removed and a liner layer is formed conformably over the trench.

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patent: 5937309 (1999-08-01), Chuang

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