Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-01
2008-07-01
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S506000
Reexamination Certificate
active
11425467
ABSTRACT:
Methods for forming or etching silicon trench isolation (STI) in a silicon-on-insulator (SOI) region and a bulk silicon region, and a semiconductor device so formed, are disclosed. The STI can be etched simultaneously in the SOI and bulk silicon regions by etching to an uppermost silicon layer using an STI mask, conducting a timed etch that etches to a desired depth in the bulk silicon region and stops on a buried insulator of the SOI region, and etching through the buried insulator of the SOI region. The buried insulator etch for this process can be done with little complexity as part of a hardmask removal step. Further, by choosing the same depth for both the bulk and SOI regions, problems with a subsequent CMP process are avoided. The invention also cleans up the boundary between the SOI and bulk regions where silicon nitride residuals may exist.
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patent: 6724046 (2004-04-01), Oyamatsu
patent: 7122864 (2006-10-01), Nagano et al.
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Dobuzinsky David M.
Faltermeier Johnathan E.
Ho Herbert L.
Kumar Mahender
Pendleton Denise
Capella Steven
Hoffman Warnick & D'Alessandro LLC
International Business Machines - Corporation
Picardat Kevin M
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