Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2008-07-25
2010-02-02
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257SE21546
Reexamination Certificate
active
07655532
ABSTRACT:
A method of forming a shallow trench isolation region includes providing a semiconductor substrate comprising a top surface; forming an opening extending from the top surface into the semiconductor substrate; filling a precursor into the opening using spin-on; performing a steam cure to the precursor to generate a dielectric material; after the steam cure, performing a chemical mechanical polish (CMP) to the dielectric material; and after the CMP, performing a steam anneal to the dielectric material.
REFERENCES:
patent: 6869860 (2005-03-01), Belyansky et al.
patent: 7112513 (2006-09-01), Smythe et al.
patent: 2006/0205233 (2006-09-01), Hieda et al.
patent: 2007/0004170 (2007-01-01), Kawasaki et al.
patent: 2007/0207590 (2007-09-01), Kiyotoshi et al.
patent: 2009/0035917 (2009-02-01), Ahn et al.
Chen Neng-Kuo
Tsai Cheng-Yuan
Tzeng Kuo-Hwa
Garber Charles D
Isaac Stanetta D
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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