STI film property using SOD post-treatment

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21546

Reexamination Certificate

active

07655532

ABSTRACT:
A method of forming a shallow trench isolation region includes providing a semiconductor substrate comprising a top surface; forming an opening extending from the top surface into the semiconductor substrate; filling a precursor into the opening using spin-on; performing a steam cure to the precursor to generate a dielectric material; after the steam cure, performing a chemical mechanical polish (CMP) to the dielectric material; and after the CMP, performing a steam anneal to the dielectric material.

REFERENCES:
patent: 6869860 (2005-03-01), Belyansky et al.
patent: 7112513 (2006-09-01), Smythe et al.
patent: 2006/0205233 (2006-09-01), Hieda et al.
patent: 2007/0004170 (2007-01-01), Kawasaki et al.
patent: 2007/0207590 (2007-09-01), Kiyotoshi et al.
patent: 2009/0035917 (2009-02-01), Ahn et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

STI film property using SOD post-treatment does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with STI film property using SOD post-treatment, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and STI film property using SOD post-treatment will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4163501

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.