STI film property using SOD post-treatment

Details STI film property using SOD post-treatment STI film property using SOD post-treatment

2008-07-25

2010-02-02

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21546

Reexamination Certificate

active

07655532

ABSTRACT:
A method of forming a shallow trench isolation region includes providing a semiconductor substrate comprising a top surface; forming an opening extending from the top surface into the semiconductor substrate; filling a precursor into the opening using spin-on; performing a steam cure to the precursor to generate a dielectric material; after the steam cure, performing a chemical mechanical polish (CMP) to the dielectric material; and after the CMP, performing a steam anneal to the dielectric material.

REFERENCES:
patent: 6869860 (2005-03-01), Belyansky et al.
patent: 7112513 (2006-09-01), Smythe et al.
patent: 2006/0205233 (2006-09-01), Hieda et al.
patent: 2007/0004170 (2007-01-01), Kawasaki et al.
patent: 2007/0207590 (2007-09-01), Kiyotoshi et al.
patent: 2009/0035917 (2009-02-01), Ahn et al.

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