Steam oxidation method

Details Steam oxidation method Steam oxidation method

2006-02-21

2006-02-21

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S770000

Reexamination Certificate

active

07001851

ABSTRACT:
This invention provides a steam oxidation method of a matter to be oxidized with proper controllability and reproducibility. It is provided a steam oxidation method, where a semiconductor substrate (a matter to be oxidized) is housed in a steam oxidation reactor and is subjected to: a first step of supplying N2gas to the reactor housing the semiconductor substrate and substituting the inside of the reactor with N2gas; a second step of stopping supply of the N2gas and supplying a steam-accompanied N2gas, in which the N2gas is accompanied with steam, to the reactor; a third step of increasing a temperature of the semiconductor substrate to 450° C. (a steam oxidation temperature) while supplying the steam-accompanied N2gas; and a fourth step of holding the semiconductor substrate for a predetermined time at 450° C.

REFERENCES:
patent: 4977839 (1990-12-01), Fochtman et al.
patent: 6255731 (2001-07-01), Ohmi et al.
patent: 6503819 (2003-01-01), Tanabe et al.
patent: 6784116 (2004-08-01), Tanabe et al.

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