Static-type semiconductor memory device

Static information storage and retrieval – Read/write circuit – Precharge

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365189, G11C 1140

Patent

active

045148317

ABSTRACT:
A high-speed static-type semiconductor memory device having static-type memory cells each being arranged at an intersection between a word line and a bit line pair. The memory device comprises a circuit means which discharges the electric charges of all the bit lines for a predetermined time period when an input address is switched, so that the potentials of the bit lines become lower than or equal to a low potential level of a bit line signal, thereby enabling the rapid readout of data from a selected memory cell.

REFERENCES:
patent: 4099265 (1978-07-01), Abe
patent: 4368529 (1983-01-01), Furuama

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