Static read only memory

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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Details

365104, 365205, G11C 700, G11C 706

Patent

active

042741475

ABSTRACT:
A static read only memory fabricated with field effect transistors of either the depletion type or the enhancement type connected in series. The read only memory includes a compact sensing circuit for detecting relatively small voltage swings at each node corresponding to a bit line of the memory cell, and a highly sensitive differential sense amplifier including first and second cascaded connected inverter stages.

REFERENCES:
patent: 4069427 (1978-01-01), Masuda
patent: 4142176 (1979-02-01), Dozier
patent: 4183093 (1980-01-01), Kawagoe
Balasubramanian et al., "Two Device Per Bit, Precharged ROS With Differential Sensing", IBM Tech. Disc. Bul., vol. 19, No. 1, 6/76, pp. 164-165.

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