Static random memory device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438382, H01L 218244

Patent

active

060016809

ABSTRACT:
A static random access memory device (SRAM) keeping a resistance value of a resistance element at a predetermined level regardless a process variation, by improving a special margin of a diffusion layer region at which the resistance element is formed and a node for connecting a gate electrode thereto. In the SRAM, there is provided a diffusion layer region in a substrate, having a first part of which may form a the resistance element, a second part of which is connected to the drain or source of the MIS access transistor, and a third part of which is connected to the source or drain of the MIS driver transistor and is defined the node, and there is provided an electrode layer connecting the gate of the MIS driver transistor and the node in the diffusion layer region. The diffusion layer region is formed so that the diffusion layer region is bent at the first part which may form the resistance element and is defined the node and a first direction between the first part and the second part and a second direction between the first part and the third part intersect at an obtuse angle.

REFERENCES:
patent: 5153852 (1992-10-01), Terrell
patent: 5377140 (1994-12-01), Usuki
patent: 5570311 (1996-10-01), Ema et al.
patent: 5770496 (1998-06-01), Roberts
patent: 5827764 (1998-10-01), Liaw et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Static random memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static random memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static random memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-862664

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.