Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-23
2011-08-23
Mandala, Victor (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27098, C257SE21575, C365S181000, C365S189011
Reexamination Certificate
active
08004042
ABSTRACT:
In accordance with an embodiment of the present invention, a static random access memory (SRAM) cell comprises a first pull-down transistor, a first pull-up transistor, a first pass-gate transistor, a second pull-down transistor, a second pull-up transistor, a second pass-gate transistor, a first linear intra-cell connection, and a second linear intra-cell connection. Active areas of the transistors are disposed in a substrate, and longitudinal axes of the active areas of the transistors are all parallel. The first linear intra-cell connection electrically couples the active area of the first pull-down transistor, the active area of the first pull-up transistor, and the active area of the first pass-gate transistor to a gate electrode of the second pull-down transistor and a gate electrode of the second pull-up transistor. The second linear intra-cell connection electrically couples the active area of the second pull-down transistor, the active area of the second pull-up transistor, and the active area of the second pass-gate transistor to a gate electrode of the first pull-down transistor and a gate electrode of the first pull-up transistor.
REFERENCES:
patent: 4951112 (1990-08-01), Choi et al.
patent: 5111428 (1992-05-01), Liang et al.
patent: 5698893 (1997-12-01), Perera et al.
patent: 5831315 (1998-11-01), Kengeri et al.
patent: 5867434 (1999-02-01), Oh et al.
patent: 5955768 (1999-09-01), Liaw et al.
patent: 5973364 (1999-10-01), Kawanaka
patent: 6285088 (2001-09-01), Madan
patent: 6310397 (2001-10-01), Chang et al.
patent: 6534805 (2003-03-01), Jin
patent: 6596466 (2003-07-01), Pohland et al.
patent: 6677649 (2004-01-01), Osada et al.
patent: 6706571 (2004-03-01), Yu et al.
patent: 6744106 (2004-06-01), Kanai
patent: 6751151 (2004-06-01), Hsu et al.
patent: 6768144 (2004-07-01), Houston et al.
patent: 6858478 (2005-02-01), Chau et al.
patent: 6864519 (2005-03-01), Yeo et al.
patent: 6900503 (2005-05-01), Oh et al.
patent: 6927461 (2005-08-01), Kim et al.
patent: 6940106 (2005-09-01), Shino
patent: 6977512 (2005-12-01), Duan et al.
patent: 7064395 (2006-06-01), Minami et al.
patent: 7176125 (2007-02-01), Liaw
patent: 7190050 (2007-03-01), King et al.
patent: 7247887 (2007-07-01), King et al.
patent: 7250657 (2007-07-01), Liaw
patent: 7259979 (2007-08-01), Sachan et al.
patent: 7265008 (2007-09-01), King et al.
patent: 7352633 (2008-04-01), Cherukuri
patent: 7508031 (2009-03-01), Liu et al.
patent: 7528465 (2009-05-01), King et al.
patent: 7605449 (2009-10-01), Liu et al.
patent: 2005/0111251 (2005-05-01), Liaw
patent: 2005/0153490 (2005-07-01), Yoon et al.
patent: 2005/0275043 (2005-12-01), Huang et al.
patent: 2006/0019488 (2006-01-01), Liaw
patent: 2007/0076491 (2007-04-01), Cherukuri
patent: 2007/0080423 (2007-04-01), Tsuboi et al.
patent: 2007/0120156 (2007-05-01), Liu et al.
patent: 2007/0122953 (2007-05-01), Liu et al.
patent: 2007/0122954 (2007-05-01), Liu et al.
patent: 2007/0128782 (2007-06-01), Liu et al.
patent: 2007/0132053 (2007-06-01), King et al.
patent: 2007/0200182 (2007-08-01), Liaw
patent: 2007/0235765 (2007-10-01), Liaw
patent: 2007/0264762 (2007-11-01), Yeo et al.
patent: 2008/0273382 (2008-11-01), Wang
patent: 2008/0290470 (2008-11-01), King et al.
patent: 2008/0296632 (2008-12-01), Moroz et al.
patent: 2009/0181477 (2009-07-01), King et al.
Chang Feng-Ming
Wang Ping-Wei
Yang Chang-Ta
Yang Lie-Yong
Mandala Victor
Moore Whitney
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Static random access memory (SRAM) cell and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Static random access memory (SRAM) cell and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static random access memory (SRAM) cell and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2780968