Static information storage and retrieval – Read/write circuit – Precharge
Patent
1992-03-27
1994-02-22
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Precharge
365207, 365190, G11C 700
Patent
active
052894193
ABSTRACT:
A static type random access memory device is equipped with sense amplifier circuits for rapidly developing small differential voltage levels respectively indicative of data bits read out from selected memory cells to digit line pairs, and the input nodes of each sense amplifier circuit are coupled with the associated digit line pair through a pair of capacitors, wherein the digit line pairs and the input nodes are respectively precharged to a high voltage level and an intermediate voltage level so that the sense amplifier circuits start on developing immediately after activation thereof.
REFERENCES:
patent: 5001668 (1991-03-01), Ito et al.
patent: 5032744 (1991-07-01), Wai Yeung Liu
patent: 5051952 (1991-09-01), Gotou
Hashizumi Toshihiro
Koyanagi Mitsuhiro
LaRoche Eugene R.
NEC Corporation
Tran Andrew
LandOfFree
Static random access memory device with high speed differential does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Static random access memory device with high speed differential , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static random access memory device with high speed differential will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-177123