Static random access memory device and method of manufacturing t

Details Static random access memory device and method of manufacturing t Static random access memory device and method of manufacturing t

1998-12-04

2000-07-18

Phan, Trong

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, G11C 1100

Patent

active

060916281

ABSTRACT:
A semiconductor memory device having a static random access memory (SRAM) cell and a method of manufacturing the same. The SRAM cell includes a semiconductor substrate, two access transistors, two drive transistors, two power supply lines and two word lines. The two access transistors and the two drive transistors are formed of a first conductive layer on a semiconductor substrate. Each of the two power supply lines is formed above the four transistors of a second conductive layer, insulated from the four transistors. Each of the two word lines is formed above the two power supply lines of a third conductive layer, insulated from the two power supply lines and connected to each gate of the two access transistors. Accordingly, in the SRAM cell, parasitic capacitance of the word line is reduced, to thereby increase the operating speed of the memory device.

REFERENCES:
patent: 5506802 (1996-04-01), Kiyono

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