Static RAM with divided word-line structure

Details Static RAM with divided word-line structure Static RAM with divided word-line structure

1986-06-09

1988-11-08

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

365226, G11C 700

Patent

active

047837675

ABSTRACT:
This invention relates to a static random access memory having the so-called divided word-line structure, uses the power supply line also as the common word line so as to enable operation at high speed without causing complication in structure of the wiring layer, resulting in that the manufacturing yield can be improved and a manufacturing coat lowers.

REFERENCES:
patent: 4542486 (1985-09-01), Anami et al.
patent: 4554646 (1985-11-01), Yoshimoto et al.

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