Static information storage and retrieval – Read/write circuit – Precharge
Patent
1990-11-19
1991-08-06
Gossage, Glenn
Static information storage and retrieval
Read/write circuit
Precharge
365156, 365190, G11C 11413
Patent
active
050383264
ABSTRACT:
A memory cell is read by first charging a pair of bit lines to given positive potentials and then raising the potential of a cell access line to render access transistors conductive. The cell supply voltage is sufficient to cause substantial hot-electron stress in the n-channel transistors of the cell if it were applied directly across their source-drain paths while they were conductive. However, a limit is imposed on the maximum positive potentials which are applied to the bit lines from the exterior, and on the minimum ratio of the sizes of the cell n-channel amplifier transistors to the sizes of the access transistors, taking into account the threshold voltages of the amplifier transistors, and as a result substantial hot-electron stress does not occur. Substantial hot-electron stress is also prevented during a write operation by arranging that this is effectively preceded by a read operation.
REFERENCES:
patent: 4451907 (1984-05-01), Donoghue
patent: 4623989 (1986-11-01), Blake
patent: 4758990 (1988-07-01), Uchida
patent: 4760557 (1988-07-01), Stewart et al.
Gubbels et al., "A 40-ns/100-pF Low-Power Full CMOS 256K (32K.times.8) SRAM", IEEE Journal of Solid State Circuits, vol. SC-22, No. 5, Oct. 1987, pp. 741-747.
Hartgring Cornelis D.
Poorter Tiemen
Biren Steven R.
Gossage Glenn
U.S. Philips Corp.
LandOfFree
Static RAM having a precharge operation which exhibits reduced h does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Static RAM having a precharge operation which exhibits reduced h, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static RAM having a precharge operation which exhibits reduced h will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1992538