Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2011-01-25
2011-01-25
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C257SE21508
Reexamination Certificate
active
07875495
ABSTRACT:
A semiconductor device is made by disposing a film layer over a substrate having first conductive layer. An opening is formed in the film layer to expose the first conductive layer. A second conductive layer is formed over the first conductive layer. A first bump is formed over the second conductive layer which promotes reflow of the first bump at a eutectic temperature. A standoff bump is formed on the film layer around a perimeter of the substrate. The film layer prevents reflow of the standoff bump at the eutectic temperature. A second bump is disposed between a semiconductor die and the first bump. The second bump is reflowed to electrically connect the semiconductor die to the first bump. After reflow of the second bump, the standoff bump has a height at least 70% of the second bump prior to reflow to maintain separation between the semiconductor die and substrate.
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Kang Tae-Woo
Lee Tae-Keun
Lee YoRim
Atkins Robert D.
Le Thao P.
STATS ChipPAC Ltd.
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