Standby current detecting circuit for use in a semiconductor mem

Static information storage and retrieval – Read/write circuit – Testing

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365227, 36523006, G11C 700

Patent

active

057843228

ABSTRACT:
A standby current detecting circuit for use in a semiconductor memory device and method thereof are described. The memory device has a plurality of memory cells arranged at crossing points of a plurality of word lines and a plurality of bit lines. A plurality of switches are associated with each memory cell. A current path supplies current to each memory cell through the switch associated with each memory cell. A plurality of decoders are provided with each decoder for detecting a standby current supplied on one such current path for the memory cell. Each decoder includes control logic for selectively opening and isolating the switch associated with the memory cell in a standby current detection mode.

REFERENCES:
patent: 5295112 (1994-03-01), Taniguchi
patent: 5313430 (1994-05-01), Rawlins

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