Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-12-29
2010-10-05
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27060, C257SE27108, C257SE29020
Reexamination Certificate
active
07808051
ABSTRACT:
An integrated circuit structure includes a semiconductor substrate; a first active region in the semiconductor substrate; and a second active region in the semiconductor substrate and of an opposite conductivity type than the first active region. A gate electrode strip is over the first and the second active regions and forms a first MOS device and a second MOS device with the first active region and the second active region, respectively. A first spacer bar is in the semiconductor substrate and connected to the first active region. At least a portion of the first spacer bar is adjacent to and spaced apart from a portion of the first active region. A second spacer bar is in the semiconductor substrate and connected to the second active region. At least a portion of the second spacer bar is adjacent to and spaced apart from a portion of the second active region.
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Chen Shu-Min
Guo Ta-Pen
Hou Yung-Chin
Li Ping Chung
Lu Lee-Chung
Hoang Quoc D
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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