Stage having electrostatic chuck and plasma processing apparatus

Details Stage having electrostatic chuck and plasma processing apparatus Stage having electrostatic chuck and plasma processing apparatus

1993-12-17

1995-01-17

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723E, 118728, H01L 2100

Patent

active

053823117

ABSTRACT:
A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting surface, and a gas path vertically extending through the susceptor is connected to the annular groove portion. A sheet-like electrostatic chuck is airtightly adhered to the mounting surface of the susceptor to cover the groove. A plurality of through holes are formed in the electrostatic chuck, and these holes are arranged along an above the groove. The heat transfer gas is supplied between the electrostatic chuck and the semiconductor wafer through the gas path, the groove, and the through holes. The heat transfer gas contributes to transfer of cold from a liquid nitrogen source arranged under the susceptor to the wafer.

REFERENCES:
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4615755 (1986-10-01), Tracy et al.
patent: 4645218 (1987-02-01), Ooshio et al.
patent: 4771730 (1988-09-01), Tezuka
patent: 5099571 (1992-03-01), Logan et al.
patent: 5155331 (1992-10-01), Horiuchi et al.
patent: 5179498 (1993-01-01), Hongoh et al.
patent: 5207437 (1993-05-01), Barnes et al.
patent: 5213349 (1993-05-01), Elliot
patent: 5255153 (1993-10-01), Nozawa et al.
patent: 5279865 (1994-01-01), Chebi et al.
patent: 5320982 (1994-06-01), Tsubone et al.

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