Stacked gate flash memory device and method of fabricating...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S700000, C438S257000

Reexamination Certificate

active

06998313

ABSTRACT:
A stacked gate flash memory device and method of fabricating the same. A cell of the stacked gate flash memory device is disposed in a cell trench within a substrate to achieve higher integration of memory cells.

REFERENCES:
patent: 6093606 (2000-07-01), Lin et al.
patent: 6548856 (2003-04-01), Lin et al.
patent: 6605506 (2003-08-01), Wu
patent: 6818948 (2004-11-01), Lin

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