Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-14
2006-02-14
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S700000, C438S257000
Reexamination Certificate
active
06998313
ABSTRACT:
A stacked gate flash memory device and method of fabricating the same. A cell of the stacked gate flash memory device is disposed in a cell trench within a substrate to achieve higher integration of memory cells.
REFERENCES:
patent: 6093606 (2000-07-01), Lin et al.
patent: 6548856 (2003-04-01), Lin et al.
patent: 6605506 (2003-08-01), Wu
patent: 6818948 (2004-11-01), Lin
Nanya Technology Corporation
Nhu David
Quintero Law Office
LandOfFree
Stacked gate flash memory device and method of fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Stacked gate flash memory device and method of fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked gate flash memory device and method of fabricating... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3711613