Stacked gate flash memory device and method of fabricating...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07056792

ABSTRACT:
A stacked gate flash memory device and method of fabricating the same. A cell of the stacked gate flash memory device in accordance with the invention is disposed in a cell trench within a substrate to achieve higher integration of memory cells.

REFERENCES:
patent: 5386132 (1995-01-01), Wong
patent: 5429970 (1995-07-01), Hong
patent: 5606521 (1997-02-01), Kuo et al.
patent: 6124608 (2000-09-01), Liu et al.
patent: 6391719 (2002-05-01), Lin et al.
patent: 6706592 (2004-03-01), Chern et al.
patent: 6818948 (2004-11-01), Lin
patent: 2002/0024081 (2002-02-01), Gratz
patent: 2004/0077147 (2004-04-01), Lin

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Stacked gate flash memory device and method of fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stacked gate flash memory device and method of fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked gate flash memory device and method of fabricating... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3664625

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.