Stacked-die extension support structure and method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

Reexamination Certificate

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Details

C257S783000, C257S786000, C438S109000

Reexamination Certificate

active

07071568

ABSTRACT:
A structure includes a substrate having a first surface, a first semiconductor die, a spacer and a second semiconductor die. The first semiconductor die has an active surface with opposite first and second parallel rows of bond pads, and an opposite inactive surface attached to the first surface of the substrate. The spacer is coupled to the active surface of the first semiconductor die entirely within the first and second rows of bond pads of the first semiconductor die, the spacer overhanging at least one side of the first semiconductor die. The second semiconductor die has an active surface and an opposite inactive surface, the active surface of the second semiconductor die larger in area than the active surface of the first semiconductor die, the active surface of the second semiconductor die with at least one row of bond pads.

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