Stacked capacitor and method of fabricating same

Details Stacked capacitor and method of fabricating same Stacked capacitor and method of fabricating same

2007-12-25

2007-12-25

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C257SE21008

Reexamination Certificate

active

11549248

ABSTRACT:
The invention relates to a stacked capacitor (10) comprising a silicon base plate (16), a poly-silicon center plate (32) arranged above the base plate (16), a lower gate-oxide dielectric (26) arranged between the base plate (16) and the center plate (32), a cover plate (36) made of a metallic conductor and arranged above the center plate (32), and an upper dielectric (34) arranged between the center plate (32) and the cover plate (36). The cover plate (36) and the base plate (16) are electrically connected to each other and together form a first capacitor electrode. The center plate (32) forms a second capacitor electrode. The invention further relates to an integrated circuit with such a stacked capacitor, as well as to a method for fabrication of a stacked capacitor as part of a CMOS process.

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