Stacked 1T-nMTJ MRAM structure

Details Stacked 1T-nMTJ MRAM structure Stacked 1T-nMTJ MRAM structure

2005-04-19

2005-04-19

Nguyen, Viet Q. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000, C365S055000, C365S066000, C365S063000, C365S129000, C365S097000

Reexamination Certificate

active

06882566

ABSTRACT:
This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor16is used to read multiple MRAM cells, which can be stacked vertically above one another in a plurality of MRAM array layers arranged in a “Z” axis direction.

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