Ferroelectric or electret memory circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C438S003000, C438S239000, C438S240000, C438S608000, C438S785000

Reexamination Certificate

active

06878980

ABSTRACT:
A ferroelectric or electret memory circuit, particularly a ferroelectric or electret memory circuit with improved fatigue resistance, including a ferroelectric or electret memory cell with a polymer or oligomer memory material contacting first and second electrodes, at least one of the electrodes is comprised of at least one functional material capable of physical and/or chemical bulk incorporation of atomic or molecular species contained in either the electrode or the memory material and displaying a propensity for migrating in the form of mobile charged and/or neutral particles between an electrode and a memory material, something which can be detrimental to both. A functional material with the above-mentioned properties shall serve to offset any adverse effect of a migration of this kind, leading to an improvement in the fatigue resistance of the memory cell. The memory circuit being used in a matrix-addressable memory device where the memory cells are formed in distinct portions in a global layer of a ferroelectric or electret thin-film memory material, particularly a polymer material.

REFERENCES:
patent: 6284654 (2001-09-01), Roeder et al.
patent: 6686236 (2004-02-01), Aggarwal et al.
patent: 10022470 (1998-01-01), None
patent: 200068465 (2000-03-01), None
patent: 0243071 (2002-05-01), None
S.B. Desu, “Minimization of Fatigue in Ferroelectric Films” Department of Materials Science and Engineering, Virginia Tech, Blacksburg, phys. stat. sol. (a) 151, 467-480 (1995).
Guerrero, et al. “Growth and Characterization of Epitaxial Ferroelectric PbZrxT11-xO3Thin Film Capacitors with SrRuO3Electrodes for Non-Volatile Memory Applications” Solid-State Electronics, 2001, No. 45, pp. 1433-1440.

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