Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2007-05-21
2009-12-01
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257S686000, C257SE23097
Reexamination Certificate
active
07626260
ABSTRACT:
Provided is a semiconductor device having a cooling path on its bottom surface. The stack-type semiconductor device having a cooling path comprises a stack-type semiconductor chip comprising a first semiconductor chip and a second semiconductor chip. The first semiconductor chip comprises a first surface in which a circuit unit is formed and a second surface in which a first cooling path is formed, and the second semiconductor chip comprises a first surface in which a circuit unit is formed and a second surface in which a second cooling path is formed. The second surface of the first semiconductor chip and the second surface of the second semiconductor chip are bonded to each other, and a third cooling path is formed in the middle of the stack-type semiconductor chip using the first and second cooling paths. Warpage of the stack-type semiconductor device is suppressed and heat is easily dissipated.
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English language abstract of Korean Publication No. 2005-0037679, Apr. 25, 2005.
Chung Hyun-Soo
Hwang Seong-Deok
Jo Cha-Jea
Lee Dong-Ho
Mandala Victor A
Samsung Electronics Co,. Ltd.
Stowe Scott
Volentine & Whitt PLLC
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