Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2007-12-07
2009-11-17
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257S723000, C257S433000, C257SE23010
Reexamination Certificate
active
07619315
ABSTRACT:
A stack type semiconductor chip package includes a first wafer mold, a protection substrate, and a second wafer mold that are stacked in a wafer level process. The first wafer mold includes a first chip having first pads and a first mold layer encapsulating the first chip. The protection substrate is placed on the first wafer mold, is mechanically bonded with the first wafer mold using a first adhesive layer, and includes wiring layers facing the first pads. The second wafer mold is placed under the first wafer mold, is mechanically bonded with the first wafer mold using a second adhesive layer, and includes a second chip having second pads, and a second mold layer encapsulating the second chip. First vias electrically connect the wiring layers of the protection substrate with the second pads. Second vias electrically connect the wiring layers of the protection substrate with external connection terminals.
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English language abstract of Korean Publication No. 2003-0057203.
English language abstract of Korean Publication No. 2006-0005720.
Jang Hyung-Sun
Kang Un-Byoung
Kwon Woon-Seong
Kwon Yong-Hwan
Lee Chung-Sun
Marger & Johnson & McCollom, P.C.
Potter Roy K
Samsung Electronics Co,. Ltd.
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