Stabilization of Ni monosilicide thin films in CMOS devices...

Details Stabilization of Ni monosilicide thin films in CMOS devices... Stabilization of Ni monosilicide thin films in CMOS devices...

2006-10-10

2006-10-10

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S663000, C438S664000, C438S682000, C438S683000, C257SE21002

Reexamination Certificate

active

07119012

ABSTRACT:
A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.

REFERENCES:
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patent: 6261889 (2001-07-01), Ono
patent: 6436783 (2002-08-01), Ono et al.
patent: 7015107 (2006-03-01), Sugihara et al.
patent: 2001/0045605 (2001-11-01), Miyashita et al.

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