SRAM structure having common bit line

Details SRAM structure having common bit line SRAM structure having common bit line

1998-11-05

1999-10-12

Dinh, Son T.

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, 365190, G11C 1140

Patent

active

059663200

ABSTRACT:
A static random access memory having a structure that allow two memory cells to use a common complementary bit line. With two memory cells using a common complementary bit line, the number of necessary bit lines will be reduce by one quarter. In other words, one quarter fewer metal lines are required. This has the effect of lowering the packing density of metal lines, or increasing the product yield and the number of memory cells that can be packed within the same wafer area.

REFERENCES:
patent: 5424995 (1995-06-01), Miyazaki et al.
patent: 5453950 (1995-09-01), Voss et al.
patent: 5471420 (1995-11-01), Nii et al.
patent: 5663905 (1997-09-01), Matsuo et al.
patent: 5689471 (1997-11-01), Voss et al.

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