SRAM for SNM measurement

Details SRAM for SNM measurement SRAM for SNM measurement

1997-09-22

1999-08-31

Nelms, David

Static information storage and retrieval

Systems using particular element

Flip-flop

365206, G11C 1100

Patent

active

059462264

ABSTRACT:
In an SRAM for SNM measurement, the original word line of the SRAM cell for SNM measurement is divided into two segments for SNM measurement, wherein one segment is connected to the first node of the SRAM cell for SNM measurement, another segment is connected to the second node of the SRAM cell for SNM measurement. In addition, an adjacent word line adjacent to the SRAM cell for SNM measurement is connected to the SRAM cell for SNM measurement to form the word line of the SRAM cell. Therefore, the process of the SRAM for SNM measurement can be improved only by modifying the mask for the layout of the polysilicon layers in conventional ones.

REFERENCES:
patent: 5327002 (1994-07-01), Motoyoshi
patent: 5600589 (1997-02-01), Ishigaki et al.
patent: 5687111 (1997-11-01), Wada et al.

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