SRAM devices utilizing tensile-stressed strain films and...

Details SRAM devices utilizing tensile-stressed strain films and... SRAM devices utilizing tensile-stressed strain films and...

2006-06-13

2006-06-13

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S211000, C438S219000, C438S221000

Reexamination Certificate

active

07060549

ABSTRACT:
SRAM devices utilizing tensile-stressed strain films and methods for fabricating such SRAM devices are provided. An SRAM device, in one embodiment, comprises an NFET and a PFET that are electrically coupled and physically isolated. The PFET has a gate region, a source region, and a drain region. A tensile-strained stress film is disposed on the gate region and at least a portion of the source region and the drain region of the PFET. A method for fabricating a cell of an SRAM device comprises fabricating an NFET and a PFET overlying a substrate. The PFET and the NFET are electically coupled and are physically isolated. A tensile-strained stress film is deposited on the gate region and at least a portion of the source region and the drain region of the PFET.

REFERENCES:
patent: 6573172 (2003-06-01), En et al.
patent: 6906393 (2005-06-01), Sayama et al.
patent: 2003/0181005 (2003-09-01), Hachimine et al.
patent: 2004/0029323 (2004-02-01), Shimizu et al.
patent: 2004/0097030 (2004-05-01), Sayama et al.
patent: 2004/0217448 (2004-11-01), Kumagai et al.
patent: 2005/0093081 (2005-05-01), Belyansky et al.
patent: 2005/0202603 (2005-09-01), Sayama et al.

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